Demonstration of a 270-GHz MMIC amplifier using 35-nm InP HEMT technology

IEEE Microwave and Wireless Components Letters

Volumn 17, Issue 5, 2007, Pages 391-393

  Deal, W R ^a,b   Mei, X B ^b   Radisic, V ^a,b   Yoshida, W ^b   Liu, P H ^b   Uyeda, J ^b   Barsky, M ^b   Gaier, T ^c   Fung, A ^c   Samoska, L ^a,c   Lai, R ^a,b  

^a IEEE   (United States)

^b NORTHROP GRUMMAN CORPORATION   (United States)

^c CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Coplanar waveguide (CPW); High electron mobility transistor (HEMT); Low noise amplifier (LNA); Millimeter wave (MM wave); MM wave integrated circuit (MMIC); Sub MM wave

Indexed keywords

HIGH FREQUENCY CIRCUITS; HIGH FREQUENCY OPERATION; LOW NOISE AMPLIFIER (LNA);

BANDWIDTH; COPLANAR WAVEGUIDES; ELECTRON MOBILITY; INTEGRATED CIRCUITS; LOW NOISE AMPLIFIERS; SEMICONDUCTING INDIUM COMPOUNDS;

MILLIMETER WAVE DEVICES;

EID: 34247567224     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2007.895728     Document Type: Article

References (10)

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