Fine-tuning of catalytic tin nanoparticles by the reverse micelle method for direct deposition of silicon nanowires by a plasma-enhanced chemical vapour technique

Journal of Colloid and Interface Science

Volumn 352, Issue 2, 2010, Pages 259-264

  Poinern, Gérrard E J ^a   Ng, Yan Jing ^a   Fawcett, Derek ^a  

^a MURDOCH UNIVERSITY   (Australia)

Author keywords

Catalytic tin nanoparticles; Fine tuning; Plasma enhanced chemical vapour deposition; Reverse micelle; Silicon nanowires

Indexed keywords

FINE-TUNING; PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION; REVERSE MICELLE; SILICON NANOWIRES; TIN NANOPARTICLES;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; BROMINE COMPOUNDS; DYNAMIC LIGHT SCATTERING; ENAMELS; HEXANE; MICELLES; NANOPARTICLES; NANOWIRES; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; TITANIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; TUNING;

TIN;

CETRIMIDE; NANOWIRE; SILICON; TIN;

AQUEOUS SOLUTION; ARTICLE; ATOMIC FORCE MICROSCOPY; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; LIGHT SCATTERING; NANOCATALYSIS; PARTICLE SIZE; PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION; PRIORITY JOURNAL; PROCESS DESIGN; RAMAN SPECTROMETRY; REPRODUCIBILITY; REVERSE MICELLE; TRANSMISSION ELECTRON MICROSCOPY;

CATALYSIS; METAL NANOPARTICLES; MICELLES; NANOTECHNOLOGY; NANOWIRES; PARTICLE SIZE; SILICON; SURFACE PROPERTIES; TIN; VOLATILIZATION;

EID: 77957757126     PISSN: 00219797     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcis.2010.08.085     Document Type: Article

References (44)

1. Chapin D.M., Fuller C.S., Pearson G.S. J. Appl. Phys. 1954, 25:676.
2. Serrano E., Guillermo R., García-Martínez J. Renew. Sust. Energy Rev. 2009, 13:2373-2384.
3. Nanosilicon Elsevier. Oxford 2008, 5:176-216.
4. Staebler D.L., Wronski C.R. Appl. Phys. Lett. 1977, 31:292.
5. Takamura T., Uehara M., Suzuki J., Sekine K., Tamura K. J. Power Sources 2006, 158:1401.
6. Laïk B., Eude L., Pereira-Ramos J., Cojocaru C.S., Pribat D., Rouvière E. Electrochim. Acta 2008, 53:5528-5532.
7. Müller J., Rech B., Springer J., Vanecek M. Mol. Sol. Energy 2004, 77:917.
8. Albuschies J., Baus M., Winkler O., Hadam B., Spangenberg B., Kurz H. Microelectron. Eng. 2006, 83:1530-1533.
9. Huang J., Hsiao C., Syu S., Chao J., Lin C. Sol. Energy. Mater. Sol. Cells 2009, 93:621-624.
10. Agarwal A., Buddharaju K., Lao I.K., Singh N., Balasubramaniam N., Kwong D.L. Sens. Actuators, A 2008, 145-146:207-213.
11. Cui Y., Wei Q., Park H., Lieber C.M. Science 2001, 293:1289.
12. McAlpine M.C., Friedman R.S., Jin S., Lin K., Wang W.U., Lieber C.M. Nano Lett. 2003, 3:1531.
13. Tian B., Zheng X., Kempa T.J., Fang Y., Yu N., Yu G., Huang J., Lieber C.M. Nature 2007, 449(7164):885-889.
14. Wang D., Sheriff B.A., McAlpine M., Heath J.R. Nano Res. 2008, 1:9-21.
15. Perraud S., Poncet S., Noël S., Levis M., Faucherand P., Rouvière E., Thony P., Jaussaud C., Delsol R. Sol. Energy. Mater Sol. Cells 2009, 93:1568-1571.
16. Wagner R.S., Ellis W.C. Appl. Phys. Lett. 1964, 4(5):89-90.
17. Lee K., Yang H.S., Baik K.H., Bang J., Vanfleet R.R., Sigmund W. Chem. Phys. Lett. 2004, 383:380-384.
18. Jeon M., Kamisako K. Mater. Lett. 2009, 63:777-779.
19. Huang B., Hsu J., Huang C. Diamond Relat. Mater. 2005, 14:2105-2108.
20. Fan S., Cao J., Dang H., Gu Q., Zhao J. Mater. Sci. Eng. C. 2001, 15:295-297.
21. Morales A.M., Lieber C.M. Science 1998, 279:208.
22. Sharma S., Kamins T.I., Williams R.S. J. Cryst. Growth 2004, 267:613-618.
23. Hochbaum A.I., Chen R., Delgado R.D., Liang W., Garnett E.C., Najarian M., Majumdar A., Yang P. Nature 2008, 451:163.
24. Gunawan O., Guha S. Sol. Energy. Mater. Sol. Cells 2009, 93:1388-1393.
25. Lew K., Redwing J.M. J. Cryst. Growth 2003, 254:14-22.
26. Smetana A.B., Wang J.S., Boeckl J., Brown G.J., Wai C.M. Langmuir 2007, 23(21):10429-10432.
27. Song K.C., Kim J.H. J. Colloid Interface Sci. 1999, 212:193-196.
28. Sarkar D., Gupta P., Gautam A., Khilar K.C. AlChE J. 2008, 54:582.
29. Yuasa M., Masaki T., Kida T., Shimanoe K., Tamazoe N. Sens. Actuators, B 2009, 136:99-104.
30. Brandani V., Giacomo G.D., Spera L. Process Biochem. 1996, 31:125.
31. Hebbar U.H., Raghavarao K.S.M.S. Process Biochem. 2007, 42:1602.
32. Jones M., Gao H., Leroux J.J. Controlled Release 2008, 132:208.
33. Ahmad T., Ganguli A.K. J. Am. Ceram. Soc. 2006, 89:1326.
34. Eastoe J., Hollamby M.J., Hudson L. Adv. Colloid Interface 2006, 128-130:5-15.
35. Boutonnet M., Lögdberg S., Svensson E.E. Curr. Opin. Colloid Interface Sci. 2008, 13:270-286.
36. Hieda J., Saito N., Takai O. Surf. Coat. Technol. 2008, 202:5343-5346.
37. Levinger N.E. Opin. Colloid Interface Sci. 2000, 5:118-124.
38. Hourlier-Bahloul D., Perrot P. C.R. Chimie. 2007, 10:658-665.
39. Meng C., Shih B., Lee S.J. Nano Part. Res. 2007, 9:657.
40. Kolansinski K.W. Curr. Opin. Solid State. Mater. 2006, 10:182-191.
41. Jeon M., Uchiyama H., Kamisako K. Mater. Lett. 2009, 63:246-248.
42. Cui Y., Lauhon L.J., Gudiksen M.S., Wang J., Leiber C.M. Appl. Phys. Lett. 2001, 78(15):2214-2216.
43. Liu Z.Q., Xie S.S., Zhou W.Y., Sun L.F., Li Y.B., Tang D.S., Zou X.P., Wang C.Y., Wang G., Crystal J. Growth 2001, 224:230-234.
44. Li B., Yu D., Zhang S. Phys. Rev. B 1999, 59(3):1645-1648.