Influence of Se on the electron mobility in thermal evaporated Bi 2(Te1-xSex)3 thin films

Vacuum

Volumn 85, Issue 3, 2010, Pages 358-364

  Soliman, L I ^a   Nassary, M M ^b   Shaban, H T ^b   Salwa, A S ^b  

^a NATIONAL RESEARCH CENTRE   (Egypt)

^b SOUTH VALLEY UNIVERSITY   (Egypt)

Author keywords

Electrical properties; Thermoelectric materials Bi2(Te1 xSe x)3; Thin films

Indexed keywords

BRIDGMAN TECHNIQUES; BULK MATERIALS; CONDUCTION MECHANISM; DEGENERATE SEMICONDUCTORS; DENSITY OF ELECTRONS; EFFECTIVE MASS; ELECTRICAL CONDUCTIVITY; ELECTRICAL PROPERTY; FREE CARRIERS; N-TYPE CONDUCTION; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE; THERMOELECTRIC MATERIAL;

ACTIVATION ENERGY; COMPOSITION EFFECTS; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; FILM PREPARATION; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; MATERIALS PROPERTIES; TEMPERATURE DISTRIBUTION; THERMAL EVAPORATION; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY; THIN FILMS; VAPOR DEPOSITION;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 77957749868     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2010.06.003     Document Type: Article

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