Optimization of chemical and electrochemical parameters for the preparation of n-type Bi2Te2.7Se0.3 thin films by electrodeposition

Journal of Applied Electrochemistry

Volumn 33, Issue 1, 2003, Pages 23-27

  Michel, S ^a   Stein, N ^a   Schneider, M ^b   Boulanger, C ^a   Lecuire, J M ^a  

^a UMR CNRS 7555   (France)

^b UNIVERSITÉ DE LORRAINE   (France)

Author keywords

Bismuth telluroselenide; Electrodeposition; Experimental design; X ray diffraction

Indexed keywords

ATOMIC FORCE MICROSCOPY; BISMUTH COMPOUNDS; ELECTROLYTES; SCANNING ELECTRON MICROSCOPY; STAINLESS STEEL; STOICHIOMETRY; SUBSTRATES; THERMOELECTRICITY; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

TERNARY ALLOYS;

ELECTRODEPOSITION;

EID: 0037257141     PISSN: 0021891X     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1022914615625     Document Type: Article

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