Ionization energy of the phosphorus donor in 3C-SiC from the donor-acceptor pair emission

Journal of Applied Physics

Volumn 108, Issue 6, 2010, Pages

  Ivanov, I G ^a   Henry, A ^a   Yan, Fei ^b   Choyke, W J ^b   Janzn E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b UNIVERSITY OF PITTSBURGH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AL PAIRS; DIELECTRIC CONSTANTS; DONOR AND ACCEPTOR; DONOR-ACCEPTOR PAIR EMISSION; DONOR-ACCEPTOR PAIRS; ELECTRON CHARGE; ELECTRONIC BAND GAPS; IONIZATION ENERGIES; LINE POSITIONS; NITROGEN IONIZATION; PHOSPHORUS DONOR; THEORETICAL SPECTRA; TYPE II;

EPITAXIAL GROWTH; IONIZATION POTENTIAL; PARTICLE DETECTORS; PHOSPHORUS; SILICON CARBIDE;

ALUMINUM;

EID: 77957741662     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3487480     Document Type: Article

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