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Volumn 67, Issue 16, 2003, Pages 1652111-1652118

Analysis of the sharp donor-acceptor pair luminescence in 4H-SiC doped with nitrogen and aluminum

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CARBON; HYDROGEN; NITROGEN; SILICON;

EID: 0037822695     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (35)

References (32)
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    • J.J. Hopfield, D.G. Thomas, and M. Gershenzon, Phys. Rev. Lett. 10, 162 (1963); D.G. Thomas, M. Gershenzon, and F.A. Trumbore, Phys. Rev. 133, A269 (1964); F.A. Trumbore and D.G. Thomas, ibid. 137, A1030 (1965).
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    • J.J. Hopfield, D.G. Thomas, and M. Gershenzon, Phys. Rev. Lett. 10, 162 (1963); D.G. Thomas, M. Gershenzon, and F.A. Trumbore, Phys. Rev. 133, A269 (1964); F.A. Trumbore and D.G. Thomas, ibid. 137, A1030 (1965).
    • (1965) Phys. Rev. , vol.137
    • Trumbore, F.A.1    Thomas, D.G.2
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    • I.S. Gorban, A.P. Krokhmal, V.I. Levin, A.S. Skirda, Yu.M. Tairov, and V.F. Tsvetkov, Fiz. Tekn. Poloprovdn. 21, 194 (1987) [Sov. Phys. Semicond. 21, 119 (1987)].
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    • note
    • Since the main contribution to the capture from remote pairs is due to capture of carriers to the excited states of the donor or acceptor, and the excited states do not exhibit such pronounced site dependence of their energies, we do not expect large differences in the capture cross section of remote pairs with any combination for the sites of the donor and the acceptor.


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