Stack layer SiO2/Gd2O3/SiO 2/GaAs pH-sensitive electrolyte insulator semiconductor capacitors and their anneal temperature dependency

Journal of the Electrochemical Society

Volumn 157, Issue 11, 2010, Pages

  Chang, Liann Be ^a   Chen, Po Chuan ^a   Jeng, Ming Jer ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEAL TEMPERATURES; COMPOUND SEMICONDUCTORS; EIS CAPACITOR; ELECTROLYTE INSULATOR SEMICONDUCTORS; GAAS; GAAS SUBSTRATES; LIGHT EMITTING DEVICES; OXIDE LAYER; PH SENSING; PH SENSITIVE; RADIO FREQUENCIES; SENSING RANGES; TRILAYERS;

CAPACITORS; ELECTROCHEMICAL CORROSION; ELECTROLYTES; ELECTROLYTIC CAPACITORS; GADOLINIUM; GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DEVICES; SILICON COMPOUNDS;

GALLIUM ALLOYS;

EID: 77957718026     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3489951     Document Type: Article

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