The enhancement of InGaAs Schottky barrier height by the addition of Pr2O3 and In2O3 in the liquid phase epitaxy

Applied Physics Letters

Volumn 70, Issue 19, 1997, Pages 2571-2573

  Wang, H T ^a   Chou, S T ^a   Chang, L B ^a   Wang, T W ^a   Tang, H C ^a  

^a NATIONAL DEFENSE UNIVERSITY   (Taiwan)

Author keywords

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Indexed keywords

EID: 0345101255     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118922     Document Type: Article

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