Interface dipole and Schottky barrier formation at Au/CdZnTe(111)A interfaces

Journal of Physical Chemistry C

Volumn 114, Issue 39, 2010, Pages 16426-16429

  Bai, Xuxu ^a   Jie, Wanqi ^a   Zha, Gangqiang ^a   Zhang, Wenhua ^b   Zhu, Junfa ^b   Wang, Tao ^a   Yuan, Yanyan ^a   Du, Yuanyuan ^a   Wang, Yabin ^a   Fu, Li ^a  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING PROCESS; BANDBENDING; CATION DIFFUSION; CD DIFFUSION; CHARGE REDISTRIBUTION; INITIAL DEPOSITIONS; INTERFACE DIPOLE; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SYNCHROTRON RADIATION PHOTOEMISSION SPECTROSCOPY;

CADMIUM ALLOYS; DIFFUSION BARRIERS; ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; GOLD COATINGS; MONOLAYERS; SCHOTTKY BARRIER DIODES; SYNCHROTRON RADIATION;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 77957606539     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp1032756     Document Type: Article

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