Buildup of the InSe/M interface (M {double bond, long} Pd, Au) studied by X-ray photoemission and X-ray absorption spectroscopy

Surface Science

Volumn 601, Issue 18, 2007, Pages 3778-3783

  Sanchez Royo J F ^a   Pellicer Porres, J ^a   Segura, A ^a   Gilliland, S J ^a   Safonova, O ^b   Chevy, A ^c  

^a UNIVERSITY OF VALENCIA   (Spain)

^b EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^c SORBONNE UNIVERSITÉ   (France)

Author keywords

Layered compounds; Metal semiconductor interfaces; Reactivity; Schottky interfaces; X ray photoemission

Indexed keywords

ABSORPTION SPECTROSCOPY; CRYSTAL ATOMIC STRUCTURE; DIFFUSION; PALLADIUM; SCHOTTKY BARRIER DIODES; X RAY ABSORPTION SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRONIC BARRIER; ELECTRONIC BEHAVIOR; LAYERED COMPOUNDS; METAL-SEMICONDUCTOR INTERFACES; SCHOTTKY INTERFACES;

INTERFACES (MATERIALS);

EID: 34548638674     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2007.04.005     Document Type: Article

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