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Volumn 504, Issue SUPPL. 1, 2010, Pages
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Cross-sectional transmission electron microscopy studies for deformation behaviors of AlN thin films under Berkovich nanoindentation
a
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Author keywords
AlN; Cross sectional transmission electron microscopy; Focused ion beam; Nanoindentation
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Indexed keywords
ALN;
ALN THIN FILMS;
AMORPHOUS PHASIS;
APPLIED LOADS;
BERKOVICH INDENTATION;
COLUMNAR GRAIN;
CONTACT STIFFNESS;
CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY;
DEFORMATION BEHAVIOR;
FOCUSED ION BEAM MILLING;
HELICON SPUTTERING;
INDENTATION-INDUCED PHASE TRANSFORMATION;
NANOINDENTERS;
NANOMECHANICAL RESPONSE;
RADIAL CRACKS;
SI (1 1 1);
SILICON SUBSTRATES;
SLIP BAND;
YOUNG'S MODULUS;
AMORPHOUS SILICON;
BEAM PLASMA INTERACTIONS;
DEFORMATION;
ELASTIC MODULI;
ELASTICITY;
ELECTRONS;
FOCUSED ION BEAMS;
GRAIN BOUNDARIES;
HARDNESS;
ION BOMBARDMENT;
IONS;
METASTABLE PHASES;
NANOINDENTATION;
SUBSTRATES;
THIN FILMS;
TRANSMISSION ELECTRON MICROSCOPY;
VAPOR DEPOSITION;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 77957577470
PISSN: 09258388
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jallcom.2010.02.050 Document Type: Article |
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Times cited : (9)
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References (18)
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