Effect of heavy boron doping on pressure-induced phase transitions in single-crystal silicon

Applied Physics Letters

Volumn 87, Issue 19, 2005, Pages 1-3

  Yan, X Q ^a   Huang, X M ^a   Uda, S ^a   Chen, M W ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; AMORPHOUS MATERIALS; BORON; COORDINATION REACTIONS; DOPING (ADDITIVES); SEMICONDUCTING SILICON; SINGLE CRYSTALS;

AMORPHOUS PHASE; BORON DOPING; LOADING RATES; UNLOADING RATES;

PHASE TRANSITIONS;

EID: 27644457830     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2120920     Document Type: Article

References (28)

1. J. C. Jamieson, Science 139, 762 (1963).
2. J. Z. Hu, L. D. Merkle, C. S. Menoni, and I. L. Spain, Phys. Rev. B 34, 4679 (1986).
3. H. Olijnyk, S. K. Sikka, and W. B. Holzaffel, Phys. Lett. 103A, 137 (1984).
4. J. Z. Hu and I. L. Spain, Solid State Commun. 51, 263 (1984).
5. J. Grain, G. J. Ackland, J. R. Maclean, R. O. Piltz, P. D. Hatton, and D. S. Pawley, Phys. Rev. B 50, 13043 (1994).
6. G. Weill, J. L. Mansot, G. Sagon, C. Carlone, and J. M. Besson, Semicond. Sci. Technol. 4, 280 (1989).
7. I. V. Gridneva, Y. V. Milman, and V. I. Trefilov, Phys. Status Solidi A 14, 177 (1972).
8. A. P. Gerk and D. Tabor, Nature (London) 271, 732 (1978).
9. M. C. Gupta and A. L. Ruoff, J. Appl. Phys. 51, 1072 (1980).
10. A. Kailer, Y. Gogotsi, and K. Nickel, J. Appl. Phys. 81, 3057 (1997).
11. Y. Gogotsi, V. Domnich, S. Dub, A. Kailer, and K. Nickel, J. Mater. Res. 15, 871 (2000).
12. V. Domnich, Y. Gogotsi, and S. Dub, Appl. Phys. Lett. 76, 2214 (2000).
13. V. Domnich and Y. Gogotsi, Rev. Adv. Mater. Sci. 3, 1 (2002).
14. A. B. Mann, D. Van Heerden, J. B. Pethica, P. Bowes, and T. P. Weihs, Philos. Mag. A 82, 1921 (2002).
15. J. Jang, M. J. Lance, S. Q. Wen, T. Y. Tsui, and G. M. Pharr, Acta Mater. 53, 1759 (2005).
16. T. Juliano, V. Domnich, and Y. Gogotsi, J. Mater. Res. 19, 3099 (2004).
17. M. A. Lourenco, D. J. Gardiner, V. Gouvernayre, and M. Bowden, J. Mater. Sci. Lett. 19, 771 (2000).
18. I. Yonenaga, T. Taishi, X. Huang, and K. Hoshikawa, J. Appl. Phys. 89, 5788 (2001).
19. K. Hoshikawa, X. Huang, T. Taishi, T. Kajigaya, and T. Iino, Jpn. J. Appl. Phys., Part 2 38, L1369 (1999).
20. W. C. Oliver and G. M. Pharr, J. Mater. Res. 7, 1564 (1992).
21. M. Hanfland and K. Syassen, High Press. Res. 3, 242 (1990).
22. C. Massobrio, V. Pontikis, and G. Martin, Phys. Rev. Lett. 62, 1142 (1989).
23. J. Koike, Phys. Rev. B 47, 7700 (1993).
24. R. W. Keyes, in Solid State Physics, edited by, F. Seitz, and, D. Turnbull, (Academic, New York, 1967), Vol. 20, p. 37.
25. F. Cerdeira and M. Cardona, Phys. Rev. B 5, 1440 (1972).
26. X. Huang, K. Wu, M. Chen, T. Toshinori, K. Hoshikawa, S. Koh, and S. Uda, Mater. Sci. Semicond. Process. (to be published).
27. J. Wang, S. Yip, S. R. Phillpot, and D. Wolf, Phys. Rev. Lett. 71, 4182 (1993).
28. J. S. Tse and D. D. Klug, Phys. Rev. Lett. 67, 3559 (1991).