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Volumn 82, Issue 7, 2010, Pages

Tight-binding study of electron-hole pair condensation in graphene bilayers: Gate control and system-parameter dependence

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Indexed keywords


EID: 77957560021     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.82.075409     Document Type: Article
Times cited : (23)

References (25)
  • 2
    • 45749119121 scopus 로고    scopus 로고
    • 10.1103/PhysRevB.77.233405
    • C.-H. Zhang and Y. N. Joglekar, Phys. Rev. B 77, 233405 (2008). 10.1103/PhysRevB.77.233405
    • (2008) Phys. Rev. B , vol.77 , pp. 233405
    • Zhang, C.-H.1    Joglekar, Y.N.2
  • 5
    • 58549104977 scopus 로고    scopus 로고
    • Graphene's valley degeneracy is unfavorable for exciton condensation when interactions are weak, see for example, 10.1103/PhysRevB.78.241401;
    • Graphene's valley degeneracy is unfavorable for exciton condensation when interactions are weak, see for example M. Y. Kharitonov and K. B. Efetov, Phys. Rev. B 78, 241401 (R) (2008) 10.1103/PhysRevB.78.241401
    • (2008) Phys. Rev. B , vol.78 , pp. 241401
    • Kharitonov, M.Y.1    Efetov, K.B.2
  • 8
    • 77957591775 scopus 로고    scopus 로고
    • The present paper does not attempt to achieve more definitive estimates of the phase diagram of strongly interaction electron-hole systems in graphene bilayers, and focuses instead on properties of the exciton condensate state.
    • The present paper does not attempt to achieve more definitive estimates of the phase diagram of strongly interaction electron-hole systems in graphene bilayers, and focuses instead on properties of the exciton condensate state.
  • 10
    • 77957563583 scopus 로고    scopus 로고
    • International Technology Roadmap for Semiconductors, 2009 update. Available from
    • International Technology Roadmap for Semiconductors, 2009 update. Available from http://www.itrs.net/
  • 11
    • 0004032840 scopus 로고    scopus 로고
    • See for example, 2nd ed. (Oxford University Press, New York
    • See for example, G. Roberts and A. Sedra, SPICE, 2nd ed. (Oxford University Press, New York, 1996).
    • (1996) SPICE
    • Roberts, G.1    Sedra, A.2
  • 19
    • 77955497651 scopus 로고    scopus 로고
    • 10.1103/PhysRevB.81.184523
    • J.-J. Su and A. H. MacDonald, Phys. Rev. B 81, 184523 (2010). 10.1103/PhysRevB.81.184523
    • (2010) Phys. Rev. B , vol.81 , pp. 184523
    • Su, J.-J.1    MacDonald, A.H.2
  • 24
    • 77957568753 scopus 로고    scopus 로고
    • Several low- κ materials with εr lower than 3.9 are used in the semiconductor processing flow, e.g., Applied Materials uses C doping in SiO2 to achieve εr in the range 2.5 to 3 in their CVD based Black Diamond® product (http://www.appliedmaterials.com/).
    • Several low- κ materials with ε r lower than 3.9 are used in the semiconductor processing flow, e.g., Applied Materials uses C doping in SiO 2 to achieve ε r in the range 2.5 to 3 in their CVD based Black Diamond® product (http://www.appliedmaterials.com/).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.