Bilayer pseudoSpin field effect transistor (BiSFET): A proposed logic device and circuits

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2009, Pages 67-68

  Reddy, Dharmendar ^a   Register, Leonard F ^a   Tutuc, Emanuel ^a   MacDonald, Allan ^a   Banerjee, Sanjay K ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER; BAND GAPS; BI-LAYER; BILAYER SYSTEMS; BOSE CONDENSATES; CARRIER CONFINEMENTS; DEGREE OF FREEDOM; ELECTRON HOLE; FERROMAGNETS; GAAS/ALGAAS; GRAPHENE LAYERS; GRAPHENES; HIGH MAGNETIC FIELDS; LOW DENSITY; MANY-BODY; P-TYPE; PSEUDOSPIN; ROOM TEMPERATURE; ROOM-TEMPERATURE OPERATION; SINGLE-PARTICLE TUNNELING; TUNNELING ,; TUNNELING CURRENT; ULTRA-LOW POWER;

ELECTRON TUNNELING; FIELD EFFECT TRANSISTORS; GRAPHENE; GRAPHITE; LOGIC DEVICES; TUNNELING (EXCAVATION); WIND TUNNELS;

MAGNETIC FIELD EFFECTS;

EID: 76549122279     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2009.5354891     Document Type: Conference Paper

References (6)

1. S. K. Banerjee et al., IEEE-EDL 30, 158-160 (2008).
2. S. M. Girvin, Physica Scripta 102, 112 (2002).
3. E. Tutuc et al., Phys. Rev. Lett. 93, 036802 (2004).
4. Min, et al., Phys. Rev. B 78, 121401, (2008).
5. Su, e al., Nature Physics 4, 799-802, (2008).
6. www.itrs.net.