Synthesis of boron nitride film with low dielectric constant for its application to silicon ultralarge scale integrated semiconductors

Diamond and Related Materials

Volumn 10, Issue 3-7, 2001, Pages 1375-1379

  Sugino, Takashi ^a   Tai, Tomoyoshi ^a   Etou, Yoshihiro ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Boron nitride; Dielectric constant; Fourier transform infared; Plasma assisted chemical vapor deposition; X Ray photoelectron spectroscopy

Indexed keywords

CAPACITANCE; CARBON; FOURIER TRANSFORM INFRARED SPECTROSCOPY; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR MATERIALS; X RAY PHOTOELECTRON SPECTROSCOPY;

INTEGRATED SEMICONDUCTORS;

BORON COMPOUNDS;

BORON NITRIDE;

EID: 0035269359     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(00)00559-8     Document Type: Article

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