Counterflow measurements in strongly correlated GaAs hole bilayers: Evidence for electron-hole pairing

Physical Review Letters

Volumn 93, Issue 3, 2004, Pages

  Tutuc, E ^a   Shayegan, M ^a   Huse, D A ^b  

^a Princeton University   (United States)

^b PRINCETON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DATA REDUCTION; ELECTRIC CHARGE; ELECTRIC POTENTIAL; EXCITONS; FERROMAGNETISM; HALL EFFECT; LEAKAGE CURRENTS; LOW TEMPERATURE EFFECTS; MAGNETIC FIELD EFFECTS; SEMICONDUCTOR QUANTUM WELLS;

ENERGY GAPS; HALL RESISTANCE; HOLE SYSTEMS; QUANTUM HALL;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 4043107463     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.93.036802     Document Type: Article

References (19)

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13. The longitudinal resistivity is the measured longitudinal resistance divided by 4, the number of squares between the voltage probes in our sample.
14. We employ the following convention for the sign of the drag resistivities: the drag resistivity, whether longitudinal or Hall, is positive when it has the opposite sign to the voltage drop in the drive layer.
15. This relation is strictly valid if the layers are identical.
16. D)/2, apparent from Fig. 2, implies that the layers have very close resitivities.
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18. The counterflow resistivities should be divided by 2, in order for the tensor inversion to represent the antisymmetric channel conductivities. This is because we have defined the counterflow resistivities using the layer current and not the total current, which is twice larger.
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