Improved characteristics of Gd2O3 nanocrystal memory with substrate high-low junction

Solid-State Electronics

Volumn 54, Issue 12, 2010, Pages 1493-1496

  Wang, Jer Chyi ^a   Lin, Chih Ting ^a   Lai, Chao Sung ^a   Hsu, Jui Lin ^a   Ai, Chi Fong ^b  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b INSTITUTE OF NUCLEAR ENERGY RESEARCH   (Taiwan)

Author keywords

Band to band tunneling (BTBT); High low junction; Non volatile memory (NVM)

Indexed keywords

NANOCRYSTALS; NONVOLATILE STORAGE; SEMICONDUCTOR STORAGE; SOFTWARE TESTING;

BAND TO BAND TUNNELING; CHARGE RETENTION CHARACTERISTIC; ELECTRONS INJECTION; HIGH-LOW; MEMORY PERFORMANCE; NANOCRYSTAL MEMORY; NON-VOLATILE MEMORY; POTENTIAL DIFFERENCE;

GADOLINIUM COMPOUNDS;

EID: 77957325382     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.06.027     Document Type: Letter

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