A NAND-type flash memory using impact ionization generated substrate hot electron programming (>20MB/sec) and hot hole erasing

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 87-90

  Wu, Jau Yi ^a   Kuo, Ming Chang ^a   Hsu, Tzu An ^a   Chen, Kuan Fu ^a   Chen, Yin Jen ^a   Lai, Erh Kun ^a   Lee, Ming Hsiu ^a   Hsieh, Kuang Yeu ^a   Liu, Rich ^a   Lu, Chih Yuan ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE INJECTION; DATA STORAGE EQUIPMENT; ELECTRIC CURRENTS; ELECTRON DEVICES; ELECTRONS; HOT CARRIERS; HOT ELECTRONS; IMPACT IONIZATION; IONIZATION; SUBSTRATES;

BAND-TO-BAND TUNNELING; BODY-TIED; CYCLING ENDURANCE; DIVIDED BIT LINE; ELECTRICAL FIELDS; FLOATING GATE MEMORIES; FOWLER-NORDHEIM; HIGH TEMPERATURE; HIGH VOLTAGES; NAND FLASH MEMORIES; NAND-TYPE FLASH MEMORY;

FLASH MEMORY;

EID: 50249109024     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4418870     Document Type: Conference Paper

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