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Volumn 183, Issue 10, 2010, Pages 2445-2450

Annealing effects on the structure, photoluminescence, and magnetic properties of GaN/Mn3O4 coreshell nanowires

Author keywords

GaN; Mn3O4; Nanowires; Photoluminescence; Thermal annealing

Indexed keywords

ANNEALING EFFECTS; ASSOCIATED MECHANISM; CORE-SHELL NANOWIRES; FERROMAGNETIC BEHAVIORS; GAN; GAN NANOWIRES; MAGNETIC MEASUREMENTS; MANGANESE ACETATE; MN3O4; RED EMISSIONS; RED PHOTOLUMINESCENCE; SHELL LAYERS; THERMAL-ANNEALING; TWO-STEP APPROACH;

EID: 77957310874     PISSN: 00224596     EISSN: 1095726X     Source Type: Journal    
DOI: 10.1016/j.jssc.2010.08.006     Document Type: Article
Times cited : (7)

References (39)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.