Ex situ Ohmic contacts to n-InGaAs

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 28, Issue 4, 2010, Pages

  Baraskar, Ashish ^a   Wistey, Mark A ^b   Jain, Vibhor ^a   Lobisser, Evan ^a   Singisetti, Uttam ^a   Burek, Greg ^a   Lee, Yong Ju ^c   Thibeault, Brian ^a   Gossard, Arthur ^a   Rodwell, Mark ^a  

^a University of California   (United States)

^b University of Notre Dame   (United States)

^c INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AIR CLEANERS; ELECTRIC CONTACTORS; ELECTRON BEAMS; METAL CLEANING; MOLYBDENUM; OHMIC CONTACTS; OZONE;

AS INTERFACES; CONTACT RESISTIVITIES; DEVICE PROCESSING; ELECTRON BEAM EVAPORATORS; ELECTRON CONCENTRATION; EX SITU; HCL ETCH; IN-SITU; METAL DEPOSITION; SEMI-CONDUCTOR SURFACES; SPECIFIC CONTACT RESISTIVITY; TRANSMISSION LINE MODELS; UV-OZONE;

ATOMS;

EID: 77957222275     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3454372     Document Type: Conference Paper

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