Fabrication of SOI MOSFET by "separation by bonding silicon islands (SBSI)" method

ECS Transactions

Volumn 6, Issue 4, 2007, Pages 309-313

  Kanemoto, K ^a   Oka, H ^a   Hisamatsu, H ^a   Matsuzawa, Y ^a   Kitano, Y ^a   Hara, T ^a   Hoshina, M ^a   Ohmi, S ^b   Kato, J ^a  

^a SEIKO EPSON CORPORATION   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; ETCHING; FABRICATION; HYDROFLUORIC ACID; MOSFET DEVICES; SI-GE ALLOYS; SILICON WAFERS; SUBSTRATES;

BULK SUBSTRATES; CRYSTALLINE DEFECTS; ELECTRICAL CHARACTERISTIC; FABRICATION PROCESS; GERMANIUM CONCENTRATION; KEY TECHNOLOGIES; LATERAL ETCHING; SELECTIVE ETCHING;

SILICON ON INSULATOR TECHNOLOGY;

EID: 45249084559     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2728875     Document Type: Conference Paper

References (3)

1. nd Intl. SiGe Technology and Device Meeting, Meeting Abstract, p. 230 (2004).
2. M. Jurczak et al., Symp. VLSI Tech. Dig., p. 29 (1999).
3. T. Sato et al., IEDM Tech. Dig., p. 809 (2001)