Chapter 6 Charge pumping techniques. Their use for diagnosis and interface states studies in MOS transistors

Instabilities in Silicon Devices

Volumn 3, Issue C, 1999, Pages 405-493

  Autran, J L ^a,b,c   Balland, B ^a   Barbottin, G ^c  

^a UNIVERSITÉ DE LYON   (France)

^b CEA DIF   (France)

^c AEROSPATIALE Service YY/ST   (France)

Author keywords

Charge pumping (CP) phenomena; Determination of Dit (E); Determination of Dit (x); Determination of (E); Emission modes; Explorable energy range; Interface traps characterization; Interface traps CP current; MOS transistors; Spectroscopic CP method; Submicrometer devices; Three level CP method; Two level CP method

Indexed keywords

EID: 77957087494     PISSN: 18745903     EISSN: None     Source Type: Book Series    
DOI: 10.1016/S1874-5903(99)80012-3     Document Type: Review

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