Characterization of individual interface traps with charge pumping

Applied Physics Letters

Volumn 68, Issue 10, 1996, Pages 1383-1385

  Saks, N S ^a   Groeseneken, G ^b   Dewolf, I ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000256808     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116087     Document Type: Article

References (9)

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2. M. J. Kirton, M. J. Uren, S. Collins, M. Schulz, A. Karmann, and K. Scheffer, Semicond. Sci. Technol. 4, 1116 (1989).
3. G. Groeseneken, H. E. Maes, N. Beltran, and R. F. DeKeersmaecker, IEEE Trans. Electron Devices ED-31, 42 (1984).
4. G. Groeseneken, I. DeWolf, R. Bellens, and H. E. Maes, Proceedings 1994, European Solid State Device Research Conference, Ulm, Germany 20-22 September, 1994, edited by C. Hill and P. Ashburn (Editions Frontieres, Gif-sur Yvette, France, 1994), p. 609; also, G. Groeseneken, I. DeWolf, R. Bellens, and H. E. Maes, accepted for publication in IEEE Transactions on Electron Devices, 1996.
5. Experimental devices were fabricated via the MOSIS service of the Information Sciences Institute, Marina del Rey, CA.
6. P. Heremans, J. Witters, G. Groeseneken, and H. E. Maes, IEEE Trans. Electron Devices ED-36, 1318 (1989).
7. E. H. Nicollian and A. Goetzberger, Bell System Tech. J. 46, 1055 (1967).
8. M. G. Ancona and N. S. Saks, J. Appl. Phys. 71, 4415 (1992).
9. H. H. Mueller, U. Schirl, and M. Schulz, Microelectron. Eng. 28, 163 (1995).