-
1
-
-
0024876243
-
Time-averaging equivalent circuit analysis of resonnant switching converters
-
J. Xu and J. Yu, "Time-averaging equivalent circuit analysis of resonnant switching converters," Int. J. Electron., vol. 67, no. 6, pp. 937-948, 1989.
-
(1989)
Int. J. Electron.
, vol.67
, Issue.6
, pp. 937-948
-
-
Xu, J.1
Yu, J.2
-
2
-
-
0026135649
-
Generalized averaging method for power conversion circuits
-
Apr.
-
S. R. Sanders et al., "Generalized averaging method for power conversion circuits," IEEE Trans. Power Electron., vol. 6, pp. 251-258, Apr. 1991.
-
(1991)
IEEE Trans. Power Electron.
, vol.6
, pp. 251-258
-
-
Sanders, S.R.1
-
3
-
-
0027577543
-
Small signal modeling of average current-mode control
-
Apr.
-
W. Tang et al., "Small signal modeling of average current-mode control," IEEE Tran. Power Electron., vol. 8, pp. 112-118, Apr. 1993.
-
(1993)
IEEE Tran. Power Electron.
, vol.8
, pp. 112-118
-
-
Tang, W.1
-
4
-
-
0029404014
-
PWM-switch modeling of dc-dc converters
-
Nov.
-
E. Van Dijk et al., "PWM-switch modeling of dc-dc converters," IEEE Trans. Power Electron., vol. 10, pp. 659-664, Nov. 1995.
-
(1995)
IEEE Trans. Power Electron.
, vol.10
, pp. 659-664
-
-
Van Dijk, E.1
-
5
-
-
0029752374
-
Switching frequency dependent averaged models for PWM dc-dc converters
-
Jan.
-
B. Lehman et al., "Switching frequency dependent averaged models for PWM dc-dc converters," IEEE Trans. Power Electron., vol. 11, pp. 89-98, Jan. 1996.
-
(1996)
IEEE Trans. Power Electron.
, vol.11
, pp. 89-98
-
-
Lehman, B.1
-
6
-
-
0033750954
-
Inductor voltage control of buck-type single-phase ac-dc converter
-
Mar.
-
R. Oruganti et al., "Inductor voltage control of buck-type single-phase ac-dc converter," IEEE Trans. Power Electron., vol. 15, pp. 411-416, Mar. 2000.
-
(2000)
IEEE Trans. Power Electron.
, vol.15
, pp. 411-416
-
-
Oruganti, R.1
-
7
-
-
0003094917
-
Averaged modeling of power converters including semiconductor device nonlinearities
-
B. Allard, H. Morel, A. Ammous, and S. Guedira, "Averaged modeling of power converters including semiconductor device nonlinearities," in Proc. PESC'98 Conf., 1998, pp. 647-653.
-
Proc. PESC'98 Conf., 1998
, pp. 647-653
-
-
Allard, B.1
Morel, H.2
Ammous, A.3
Guedira, S.4
-
8
-
-
0003171137
-
Building advanced averaged models of power converters from switched bond graph representation
-
Tech. Rep.
-
____, Building advanced averaged models of power converters from switched bond graph representation, Tech. Rep., pp. 331-337.
-
-
-
Allard, B.1
Morel, H.2
Ammous, A.3
Guedira, S.4
-
9
-
-
0013412706
-
Averaged modeling of power converters using bond graphs
-
Tech. Rep., SCS Sim
-
B. Allard, H. Morel, S. Ghedira, and A. Ammous, Averaged modeling of power converters using bond graphs, Tech. Rep., SCS Sim, vol. 1, pp. 270-277, 1997.
-
(1997)
, vol.1
, pp. 270-277
-
-
Allard, B.1
Morel, H.2
Ghedira, S.3
Ammous, A.4
-
11
-
-
0141510184
-
A new cad system to evaluate IGBT losses on inductive load
-
F. Profumo, A. Tenconi, G. Griva, and S. Facelli, "A new cad system to evaluate IGBT losses on inductive load," in Proc. EPE'95 Conf., Sevilla, Spain, pp. 1.255-1.261.
-
Proc. EPE'95 Conf., Sevilla, Spain
-
-
Profumo, F.1
Tenconi, A.2
Griva, G.3
Facelli, S.4
-
12
-
-
10444283024
-
A bond graph simulator for power train simulation including semiconductor device models
-
B. Allard, H. Morel, A. Ammous, and S. Ghedira, "A bond graph simulator for power train simulation including semiconductor device models," in Proc. IMACS'96 Conf., pp. 500-505.
-
Proc. IMACS'96 Conf.
, pp. 500-505
-
-
Allard, B.1
Morel, H.2
Ammous, A.3
Ghedira, S.4
-
13
-
-
0028132467
-
State variable modeling of the power PiN diode using explicit approximation of semiconductor device equations: A novel approach
-
Jan.
-
H. Morel, S. Gamal, and J. P. Chante, "State variable modeling of the power PiN diode using explicit approximation of semiconductor device equations: A novel approach," IEEE Trans. Power Electron., vol. 9, pp. 112-120, Jan. 1994.
-
(1994)
IEEE Trans. Power Electron.
, vol.9
, pp. 112-120
-
-
Morel, H.1
Gamal, S.2
Chante, J.P.3
-
14
-
-
0027844879
-
Modeling buffer layer IGBTs for circuit simulation
-
June
-
A. R. Hefner, Jr., "Modeling buffer layer IGBTs for circuit simulation," Proc. IEEE PESC'93 Conf., pp. 60-70, June 1993.
-
(1993)
Proc. IEEE PESC'93 Conf.
, pp. 60-70
-
-
Hefner A.R., Jr.1
-
15
-
-
0028497396
-
An experimentally verified IGBT model implemented in the Saber circuit simulator
-
Sept.
-
A. R. Hefner, Jr. and D. M. Diebolt, "An experimentally verified IGBT model implemented in the Saber circuit simulator," IEEE Trans. Power Electron., vol. 9, pp. 532-542, Sept. 1994.
-
(1994)
IEEE Trans. Power Electron.
, vol.9
, pp. 532-542
-
-
Hefner A.R., Jr.1
Diebolt, D.M.2
-
16
-
-
29144505545
-
An analytical model for the steady-state and transient characteristics of power insulated-gate bipolar transistor
-
A. R. Hefner, Jr. and D. L. Blackburn, "An analytical model for the steady-state and transient characteristics of power insulated-gate bipolar transistor," Solid-State Electron., vol. 31, no. 10, pp. 1513-1532, 1988.
-
(1988)
Solid-State Electron.
, vol.31
, Issue.10
, pp. 1513-1532
-
-
Hefner A.R., Jr.1
Blackburn, D.L.2
-
17
-
-
0025497993
-
An improved understanding for the transient operation of the power insulated gate bipolar transistor (IGBT)
-
July
-
A. R. Hefner, Jr., "An improved understanding for the transient operation of the power insulated gate bipolar transistor (IGBT)," IEEE Trans. Power Electron., vol. 5, pp. 459-468, July 1990.
-
(1990)
IEEE Trans. Power Electron.
, vol.5
, pp. 459-468
-
-
Hefner A.R., Jr.1
-
18
-
-
0034224696
-
Electrothermal modeling of IGBTs: Application to short-circuit conditions
-
July
-
A. Ammous, K. Ammous, H. Morel, B. Allard, D. Bergogne, F. Sellami, and J. P. Chante, "Electrothermal modeling of IGBTs: Application to short-circuit conditions," IEEE Trans. Power Electron., vol. 15, pp. 778-790, July 2000.
-
(2000)
IEEE Trans. Power Electron.
, vol.15
, pp. 778-790
-
-
Ammous, A.1
Ammous, K.2
Morel, H.3
Allard, B.4
Bergogne, D.5
Sellami, F.6
Chante, J.P.7
-
19
-
-
0013446960
-
Estimation of the technological parameters of the PiN diode from switching characteristics
-
Ph.D. dissertation, Inst. Nat. Sci. Appl., Lyon, France
-
S. Guedira, "Estimation of the Technological Parameters of the PiN Diode From Switching Characteristics," Ph.D. dissertation, Inst. Nat. Sci. Appl., Lyon, France, 1998.
-
(1998)
-
-
Guedira, S.1
-
20
-
-
0002231789
-
The thermal equivalent circuit of a transistor
-
P. R. Strickland, "The thermal equivalent circuit of a transistor," IBM J., pp. 35-45, 1959.
-
(1959)
IBM J.
, pp. 35-45
-
-
Strickland, P.R.1
-
21
-
-
0028497840
-
Thermal component models for electrothermal network simulation
-
Sept.
-
A. R. Hefner and D. L. Blakburn, "Thermal component models for electrothermal network simulation," IEEE Trans. Comp., Packag., Manufact. Technol. A, vol. 17, pp. 413-424, Sept. 1994.
-
(1994)
IEEE Trans. Comp., Packag., Manufact. Technol. A
, vol.17
, pp. 413-424
-
-
Hefner, A.R.1
Blakburn, D.L.2
-
22
-
-
0030247516
-
A rational formulation of thermal circuit models for electrothermal simulation-Part I: Finite element method
-
Sept.
-
J. T. Hsu and L. Vu-Quoc, "A rational formulation of thermal circuit models for electrothermal simulation-Part I: Finite element method," IEEE Trans. Circuits Syst. I, vol. 43, pp. 721-732, Sept. 1996.
-
(1996)
IEEE Trans. Circuits Syst. I
, vol.43
, pp. 721-732
-
-
Hsu, J.T.1
Vu-Quoc, L.2
-
23
-
-
0033099614
-
Choosing a thermal model for electrothermal simulation of power semiconductor devices
-
Mar.
-
A. Ammous, S. Ghedira, B. Allard, and H. Morel, "Choosing a thermal model for electrothermal simulation of power semiconductor devices," IEEE Trans. Power Electron., vol. 14, pp. 300-307, Mar. 1999.
-
(1999)
IEEE Trans. Power Electron.
, vol.14
, pp. 300-307
-
-
Ammous, A.1
Ghedira, S.2
Allard, B.3
Morel, H.4
-
24
-
-
0031646746
-
Transient temperature measurements and modeling of IGBTs under short-circuit
-
Jan.
-
A. Ammous, B. Allard, and H. Morel, "Transient temperature measurements and modeling of IGBTs under short-circuit," IEEE Trans. Power Electron., vol. 13, pp. 12-25, Jan. 1998.
-
(1998)
IEEE Trans. Power Electron.
, vol.13
, pp. 12-25
-
-
Ammous, A.1
Allard, B.2
Morel, H.3
-
25
-
-
0141621421
-
Deriving an equivalent thermal model from transient thermal impedance data for discrete semiconductor devices
-
A. Ammous et al., "Deriving an equivalent thermal model from transient thermal impedance data for discrete semiconductor devices," Int. J. Thermal Sci., vol. 42, no. 5, 2002.
-
(2002)
Int. J. Thermal Sci.
, vol.42
, Issue.5
-
-
Ammous, A.1
-
26
-
-
0026135785
-
Thermal parameter estimation using recursive identification
-
Apr.
-
G. L. Skibinski et al., "Thermal parameter estimation using recursive identification," IEEE Trans. Power Electron., vol. 6, pp. 228-239, Apr. 1991.
-
(1991)
IEEE Trans. Power Electron.
, vol.6
, pp. 228-239
-
-
Skibinski, G.L.1
-
27
-
-
0029275470
-
Analysis of thermal transient data with synthesized dynamic models for semiconductor devices
-
Mar.
-
J. W. Sofia, "Analysis of thermal transient data with synthesized dynamic models for semiconductor devices," IEEE Trans. Comp., Packag., Manufact. Technol. A, vol. 18, pp. 39-47, Mar. 1995.
-
(1995)
IEEE Trans. Comp., Packag., Manufact. Technol. A
, vol.18
, pp. 39-47
-
-
Sofia, J.W.1
|