Simple circuit model of SiC pin diode composed by using experimental electrical characteristics

IEICE Electronics Express

Volumn 2, Issue 13, 2005, Pages 392-398

  Asano, Katsunori ^a,b   Funaki, Tsuyoshi ^a   Hikihara, Takashi ^a   Sugawara, Yoshitaka ^b  

^a KYOTO UNIVERSITY   (Japan)

^b KANSAI ELECTRIC POWER CO   (Japan)

Author keywords

circuit model; forward characteristics; pin diode; recovery characteristics; SiC

Indexed keywords

EID: 77956069938     PISSN: 13492543     EISSN: None     Source Type: Journal    
DOI: 10.1587/elex.2.392     Document Type: Article

References (6)

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2. Yoshitaka Sugawara, Daisuke Takayama, Katsunori Asano, Ranbir Singh, H. Kodama, Syuji Ogata, and Toshihiko Hayashi, “3 kV 600A 4H-SiC High Temperature Diode Module,” Proc. ISPSD'02, pp. 245-248, 2002.
3. Cliff L. Ma and P. O. Lauritzen, “A Simple Power Diode Model with Forward and Reverse Recovery,” IEEE Trans. Power Electron., vol. 8, no. 4, pp. 342-346, 1993.
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6. John Mookken, Robert Lewis, Jerry L. Hudgins, A. Agarwal, J. B. Casady, and S. Siergiej, “Switching Characteristics of an Asymmetrical Complementary 4H-SiC Gate Turn Off (GTO) Thyristor,” Rec. IEEE LAS Annual Meeting, pp. 1000-1005, 1997.