Temperature Effects on IGCT Performance

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn 2, Issue , 2003, Pages 1006-1011

  Wang, X ^a   Caiafa, A ^a   Hudgins, J ^a   Santi, E ^a  

^a The Department of Mechanical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC LOADS; GATES (TRANSISTOR); SWITCHING;

INTEGRATED GATE-COMMUTATED THYRISTORS (IGCT);

THYRISTORS;

EID: 0242424953     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. Bjoern Oedegard, Thomas Stiasny, Eric Carroll, Marco Rossinelli, "Application-specific Asymmetrie IGCT," PCIM Rec., November 2001.
2. Eric R. Motto, M. Yamamoto, "HVIGBT or GCT," PCIM Rec., p36-43, May 1999.
3. S.Klaka, S. Linder, M. Frecker, "A Family of Reverse Conducting Gate Commutated Thyristors for Medium Voltage Drive Applications," PCIM Rec., Hong Kong, October 1997.
4. Eric Carroll, Sven Klaka, Stefan Linder, "Integrated Gate-commutated Thyristors: A New Approach to High Power Electronics," IEEE IEDMC Rec., Milwaukee, May 20, 1997.
5. S. Eicher, etc., "Design Consideration for a 7kV/3KA GTO with Transparent Anode and Buffer Layer," IEEE PESC Rec., pp. 29-34, June 1996.
6. H. Grning, F. Bauer, H.R. Zeller, A. Weber, W. Fichtner, "High- power Hard-drive GTO Module for 4.5kV/3kA Snubberless Operation," PCIM Proc., Nuremberg, May 1966.
7. Cliff L. Ma, P. O. Lauritzen, Pao-Yi Lin, I. Budihardjo, "A Systematic Approach to Modeling of Power Semiconductor Devices Based on Charge Control Principles," IEEE PESC Rec., Taiwan, pp. 31-37, June 1994.
8. C.L. Ma, P.O. Lauritzen, "A physics-based GTO Model For Circuit Simulation," IEEE PESC Rec., pp. 872-878, June 1995.
9. B.J. Baliga, Power Semiconductor Devices, PWS Publishing Company, New York, 1995.