Physics-based MCT circuit model using the lumped-charge modeling approach

IEEE Transactions on Power Electronics

Volumn 16, Issue 2, 2001, Pages 264-272

  Hossain, Zia ^a,b,c,d,e   Olejniczak, Kraig J ^a,f   Alan Mantooth, H ^a,f   Yang, Eric X ^a,g   Ma, Cliff L ^h  

^a IEEE   (United States)

^b ON SEMICONDUCTOR   (United States)

^c Analogy Inc   (United States)

^d INTERSIL CORPORATION   (United States)

^e UNIVERSITY OF ARKANSAS   (United States)

^f University of Arkansas   (United States)

^g SEMTECH CORPORATION   (United States)

^h SDL INC   (United States)

Author keywords

Hard and soft switching; Lumped charge models; MOS controlled thyristor MCT; Power device modeling; Saber simulation

Indexed keywords

LUMPED CHARGE MODELING; MOS CONTROLLED THYRISTORS; SOFT SWITCHING;

BIPOLAR TRANSISTORS; ELECTRIC CHARGE; MOS DEVICES; SEMICONDUCTOR DEVICE MODELS; SWITCHING SYSTEMS;

THYRISTORS;

EID: 0035279172     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/63.911151     Document Type: Article

References (13)

1. A systematic approach to modeling of power semiconductor devices based on charge control principles
2. Modeling of power diodes with the lumped-charge modeling technique
3. A physics-based GTO model for circuit simulation
4. The lumped-charge power MOSFET model including parameter extraction
5. Switching loss of 600 V Gen-1 and Gen-2 P-MCTs in soft-switching circuits
6. Characteristics of GTOs and high voltage MCTs in high power soft-switching converters
7. Characteristics of MOS-controlled thyristors under zero-voltage soft-switching conditions
8. MCTs and IGBTs: A comparison of performance in power electronic circuits
9. Design of a 250 kW soft-switching inverter for power electronics building block (PEBB) application