Cryogenic study and modeling of IGBTs

PESC Record - IEEE Annual Power Electronics Specialists Conference

Volumn 4, Issue , 2003, Pages 1897-1903

  Caiafa, A ^a   Wang, X ^a   Hudgins, J L ^a   Santi, E ^a   Palmer, P R ^b  

^a The Department of Mechanical Engineering   (United States)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYOGENICS; SWITCHING; WAVEFORM ANALYSIS;

TRENCH-GATE;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0042656822     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (25)

1. J.F. Karner, H.W. Lorenzen, and W. Rehm, "Semiconductors at low temperatures," EPE-MADEP Conf Rec., pp. 500-505, September 1991.
2. F. Rosenbauer, H.W. Lorenzen, "Behavior of IGBT modules in the temperature range from 5 to 300 K," Cryogenic Engineering Con. Rec., July 1995.
3. V.A.K. Temple, F.W. Holroyd, "Feasibility study for low-temperature thyristor operation," General Electric Technical Information Series, December 1986.
4. B. Lengeler, "Semiconductor Devices suitable for use in Cryogenic environments," Cryogenics, pp 439-447, 1974.
5. S. Menhart, J.L. Hudgins, and W.M. Portnoy, "The low temperature behavior of thyristors," IEEE Tran. ED, vol. 39, pp. 1011-1013, April 1992.
6. J.L. Hudgins, S. Menhart, W.M. Portnoy, and V.A. Sankaran, "Temperature variation effects on the switching characteristics of mosgate devices," EPE - MADEP Conf. Rec., pp. 262-266, September 1991.
7. J.L. Hudgins, C.V. Godbold, W.M. Portnoy, and O.M. Mueller, "Temperature effects on GTO characteristics," IEEE IAS Annual Mtg. Rec., pp. 1182-1186, October 1994.
8. P.R. Palmer, J.C. Joyce, P.Y. Eng, J.L. Hudgins, E. Santi, and R. Dougal, "Circuit simulator models for the diode and IGBT with full temperature dependent features," IEEE PESC Rec., pp. 470-476, June 2001.
9. Leturcq, Berraies, Debrie, Gillet, Kallala and Massol, "Bipolar semiconductor device models for computer-aided design in power electronics," 6th European Conference on Power Electronics, vol. 2, p. 84, Sept. 1995.
10. X. Kang, A. Caiafa, E. Santi, J.L. Hudgins, and P.R. Palmer, "Parameter extraction for a power diode circuit simulator model including temperature dependent effects," IEEE APEC Rec., pp. 452-458, March 2002.
11. X. Kang, A. Caiafa, E. Santi, J.L. Hudgins, and P.R. Palmer, "Low temperature characterization and modeling of IGBTs," IEEE PESC Rec., pp., June 2002.
12. X. Kang, A. Caiafa, E. Santi, J.L. Hudgins, and P.R. Palmer, "Characterization and modeling of high-voltage field-stop IGBTs," IEEE IAS Ann. Mtg. Rec., pp., October 2002.
13. H.D. Barber, "Effective mass and intrinsic concentration in silicon," Solid-State Electronics, vol. 10, pp. 1039-1051, 1967.
14. C.D. Thurmond, "The standard thermodynamic function for the formation of electrons and holes in Ge, Si, GaAs, and GaP," J. Electrochem. Soc., vol 122, pp. 1133-1141, August, 1975.
15. F.J. Morin and J.P. Maita, "Electrical properties of silicon containing arsenic and boron," Physical Rev., vol. 96, no. 1, pp. 28-35, October 1954.
16. F.H. Gaensslen and R.C. Jaeger, "Temperature dependent threshold behavior of depletion mode MOSFETs," Solid-State Electronics, vol. 22, pp. 423-430, 1979.
17. W. Bludau, A. Onton, and W. Heinke, "Temperature dependence of bandgap of silicon," J. Appl. Phys., vol. 45, pp. 1846-1848, 1974.
18. F.H. Gaensslen, V.L. Rideout, E.J. Walker, and J.J. Walker, "Very small MOSFETs for low temperature operation," IEEE Trans. ED, vol. 24, pp. 218-229, March 1977.
19. C. Jacoboni, C. Canali, G. Ottaviani, and A.A. Quaranta, "A review of some charge transport properties of silicon," Solid-State Elec., vol. 20, pp. 77-89, 1977.
20. P. Norton, T. Braggins, and H. Levinstein, Phys. Rev., vol. B8, p. 5632, 1973.
21. A.R. Hefner, "A dynamic electro-thermal model for the IGBT," IEEE Trans. IA, vol. 30, no. 2, pp. 394-405, March/April 1994.
22. R. Singh and B.J. Baliga, Cryogenic Operation of Silicon Power Devices, p. 18, Kluwer Academic, Boston, 1998.
23. R.A. Logan and A.J. Peters, J. Appl. Phys., vol 31, p. 122, 1960.
24. D.B.M. Klaassen, "A unified mobility model for device simulation-II. Temperature dependence of carrier mobility and lifetime," Solid-State Elec.,vol 35, pp. 961-967, 1992.
25. F. Rosenbauer and H.W. Lorenzen, "Behavior of IGBT modules in the temperature range from 5 to 300 K," Cryogenic Engineering Conf. Rec., Columbus, OH, July 1995.