Point defects and electrical properties of Sn-doped In-based transparent conducting oxides

Solid State Ionics

Volumn 129, Issue 1, 2000, Pages 135-144

  Hwang, J H ^a   Edwards, D D ^b   Kammler, D R ^a   Mason, T O ^a  

^a NORTHWESTERN UNIVERSITY   (United States)

^b New York State College of Ceramics at Alfred University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY OF SOLIDS; OXYGEN; PARTIAL PRESSURE; POINT DEFECTS; POLYCRYSTALLINE MATERIALS; TIN;

INDIUM TIN OXIDE; TRANSPARENT CONDUCTING OXIDES;

INDIUM COMPOUNDS;

EID: 0033885559     PISSN: 01672738     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-2738(99)00321-5     Document Type: Article

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