Chemical diffusion of oxygen in tin dioxide: Effects of dopants and oxygen partial pressure

Journal of Solid State Chemistry

Volumn 178, Issue 10, 2005, Pages 3027-3039

  Kamp, B ^a   Merkle, R ^a   Lauck, R ^a   Maier, J ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

Defect chemistry; Drift processes; EPR; Oxygen diffusion; SnO2; Taguchi sensor; Trapping reaction

Indexed keywords

ELECTRIC CONDUCTORS; ELECTRONS; OXYGEN; PARAMAGNETIC RESONANCE; RELAXATION PROCESSES; STOICHIOMETRY;

DIFFUSION COEFFICIENTS; DOPANTS; TIN DIOXIDE; VACCANCIES;

DIFFUSION;

EID: 25444441242     PISSN: 00224596     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jssc.2005.07.019     Document Type: Article

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