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Journal of Applied Physics

Volumn 108, Issue 5, 2010, Pages

Electric current enhanced defect elimination in thermally annealed Bi-Sb-Te and Bi-Se-Te thermoelectric thin films

(2) Liou, K M a Liao, C N a

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC DIFFUSION; BASAL PLANES; BI-SB-TE; BI-SE-TE; BISMUTH TELLURIDE; DEFECT ELIMINATION; ELECTRIC CURRENT STRESSING; ELECTRICAL CONDUCTIVITY; ELECTRICAL TRANSPORT PROPERTIES; HIGH-TEMPERATURE ANNEALING; LATTICE DEFECTS; MODEL-BASED; NANOCRYSTALLINE THIN FILMS; POST DEPOSITION TREATMENT; THERMAL TREATMENT; THERMOELECTRIC PROPERTIES; THERMOELECTRIC THIN FILMS; VOLATILE CONSTITUENTS;

ANNEALING; BISMUTH; DEFECTS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENT MEASUREMENT; ELECTRIC POWER SUPPLIES TO APPARATUS; GRAIN GROWTH; PRECIPITATION (CHEMICAL); SEMICONDUCTING SELENIUM COMPOUNDS; THIN FILMS; TRANSPORT PROPERTIES; VAPOR DEPOSITION; VOLATILE ORGANIC COMPOUNDS;

TELLURIUM COMPOUNDS;

EID: 77956807927 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3477184 Document Type: Article

Times cited : (25)

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