Effect of sapphire substrate nitridation on the elimination of rotation domains in ZnO epitaxial films

Journal of Physics D: Applied Physics

Volumn 37, Issue 21, 2004, Pages 3058-3062

  Ying, Minju ^a   Du, Xiaolong ^a   Mei, Zengxia ^a   Zeng, Zhaoquan ^a   Zheng, Hao ^a   Wang, Yong ^a   Jia, Jinfeng ^a   Zhang, Ze ^b   Xue, Qikun ^a  

^a INSTITUTE OF PHYSICS   (China)

^b BEIJING UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; DEPOSITION; HIGH ENERGY ELECTRON DIFFRACTION; HYDROGEN; OPTOELECTRONIC DEVICES; SAPPHIRE; X RAY DIFFRACTION; ZINC COMPOUNDS;

BAND GAP; EPITAXIAL FILMS; NITRIDATION; ROTATION DOMAINS;

THIN FILMS;

EID: 9144228218     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/37/21/017     Document Type: Article

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