Improved n-type bottom-contact organic transistors by introducing a poly(3,4-ethylenedioxythiophene):Poly(4-styrene sulfonate) coating on the source/drain electrodes

Applied Physics Letters

Volumn 97, Issue 10, 2010, Pages

  Hong, Kipyo ^a   Kim, Se Hyun ^a   Yang, Chanwoo ^a   Jang, Jaeyoung ^a   Cha, Hyojung ^a   Park, Chan Eon ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM-CONTACT; CRYSTALLINITIES; DEVICE PERFORMANCE; ETHYLENEDIOXYTHIOPHENES; ORGANIC TRANSISTOR; PEDOT:PSS; PERYLENETETRACARBOXYLIC DIIMIDES; SOURCE/DRAIN ELECTRODES;

COATINGS; ELECTRODES; ELECTRONIC STRUCTURE; GOLD COATINGS; STYRENE;

FIELD EFFECT TRANSISTORS;

EID: 77956589454     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3488817     Document Type: Article

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