Origin of large positive magnetoresistance in the hard-gap regime of epitaxial Co-doped ZnO ferromagnetic semiconductors

Physical Review B - Condensed Matter and Materials Physics

Volumn 79, Issue 11, 2009, Pages

  Tian, Y F ^a,b   Yan, Shi Shen ^a   Cao, Q ^a   Deng, J X ^a   Chen, Y X ^a   Liu, G L ^a   Mei, L M ^a   Qiang, Y ^a  

^a SHANDONG UNIVERSITY   (China)

^b UNIVERSITY OF IDAHO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 65249123135     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.79.115209     Document Type: Article

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