Scaling dopant states in a semiconducting nanostructure by chemically resolved electron energy-loss spectroscopy: A case study on Co-doped ZnO

Journal of the American Chemical Society

Volumn 132, Issue 18, 2010, Pages 6492-6497

  Wang, Xuefeng ^a,b   Song, Fengqi ^c   Chen, Qian ^d   Wang, Tingyu ^a   Wang, Jinlan ^d   Liu, Peng ^b   Shen, Mingrong ^b   Wan, Jianguo ^c   Wang, Guanghou ^c   Xu, Jian Bin ^e  

^a UNIVERSITY OF SYDNEY   (Australia)

^b SOOCHOW UNIVERSITY   (China)

^c NANJING UNIVERSITY   (China)

^d SOUTHEAST UNIVERSITY   (China)

^e CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL RESOLUTION; CO-DOPANTS; CO-DOPED ZNO; DENSITY FUNCTIONALS; DILUTE MAGNETIC SEMICONDUCTORS; DOPANT STATE; DOPED SYSTEMS; ROOM-TEMPERATURE FERROMAGNETISM; SEMICONDUCTING NANOSTRUCTURES; SPATIAL DISTRIBUTION; SPATIAL RESOLUTION; SPECTROSCOPIC PROBES; THEORETICAL CALCULATIONS; UNDERLYING MECHANISM; VALENCE ELECTRON; ZNO;

DISSOCIATION; DOPING (ADDITIVES); ELECTRON ENERGY LEVELS; ELECTRON SCATTERING; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ELECTRONS; MAGNETIC SEMICONDUCTORS; MATERIALS PROPERTIES; NANORODS; ZINC; ZINC OXIDE;

ELECTRON ENERGY LOSS SPECTROSCOPY;

COPPER; FERROMAGNETIC MATERIAL; NANOMATERIAL; NANOROD; ZINC OXIDE;

ARTICLE; ATOM; CHEMICAL STRUCTURE; ELECTRON; ELECTRON ENERGY LOSS SPECTROSCOPY; QUANTITATIVE ANALYSIS; ROOM TEMPERATURE; SEMICONDUCTOR;

EID: 77952029217     PISSN: 00027863     EISSN: 15205126     Source Type: Journal    
DOI: 10.1021/ja100912k     Document Type: Article

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