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Volumn 49, Issue 7 PART 1, 2010, Pages 0711041-0711045

Optimization of the growth conditions for molecular beam epitaxy of Mg xZn1-xO (0 < x < 0:12) films on Zn-polar ZnO substrates

Author keywords

[No Author keywords available]

Indexed keywords

DECAY COMPONENTS; FIRST EXCITED STATE; FREE EXCITONS; GROWTH CONDITIONS; NONRADIATIVE RECOMBINATION CENTERS; NORMAL VECTOR; PHOTOLUMINESCENCE SPECTRUM; PL LIFETIME; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; TERRACE STRUCTURE; TIME-RESOLVED PL MEASUREMENT; ZNO FILMS; ZNO SINGLE CRYSTALS; ZNO SUBSTRATE;

EID: 77956536833     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.071104     Document Type: Article
Times cited : (11)

References (32)
  • 30
    • 77956525698 scopus 로고    scopus 로고
    • 1-xO films were grown at 850 °C in ref. 22. In this study, this growth temperature has been recalibrated to be 900 °C by using an infrared thermography
    • 1-xO films were grown at 850 °C in ref. 22. In this study, this growth temperature has been recalibrated to be 900 °C by using an infrared thermography.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.