Nanoscale strain characterization in microelectronic materials using X-ray diffraction

Powder Diffraction

Volumn 25, Issue 2, 2010, Pages 108-113

  Murray, Conal E ^a   Ying, A J ^b   Polvino, S M ^b   Noyan, I C ^b   Cai, Z ^c  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b Columbia University ^*  (United States)

^c ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

Stress; Thin films; X ray diffraction

Indexed keywords

IN-SITU CHARACTERIZATION; MEASUREMENT TECHNIQUES; MICROELECTRONIC MATERIALS; MICROELECTRONIC TECHNOLOGIES; NONDESTRUCTIVE METHODS; STRAIN CHARACTERIZATION; SUB-MICRON RESOLUTIONS; X-RAY MICROBEAM DIFFRACTION;

CMOS INTEGRATED CIRCUITS; EPITAXIAL GROWTH; MICROELECTRONICS; SILICON NITRIDE; STRESSES; THIN FILMS; X RAY DIFFRACTION;

STRAIN;

EID: 77956518737     PISSN: 08857156     EISSN: 19457413     Source Type: Journal    
DOI: 10.1154/1.3394205     Document Type: Article

References (18)

1. Bardeen J, Shockley W. Deformation potentials and mobilities in non-polar crystals. Phys. Rev. 1950, 80:72-80. PRVAAH, 0096-8250, 10.1103/PhysRev.80.72.
2. Brantley WA. Calculated elastic constants for stress problems associated with semiconductor devices. J. Appl. Phys. 1973, 44:534-535. JAPIAU, 0021-8979, 10.1063/1.1661935.
3. Colman D, Bate RT, Mize JP. Mobility anisotropy and piezoresistance in silicon p-type inversion layers. J. Appl. Phys. 1968, 39:1923-1931. JAPIAU, 0021-8979, 10.1063/1.1656464.
4. Davies JH. Elastic field in a semi-infinite solid due to thermal expansion or a coherently misfitting inclusion. ASME J. Appl. Mech. 2003, 70:655-660. JAMCAV, 0021-8936, 10.1115/1.1602481.
5. DeWolf I, Norstrom H, Maes HE. Process-induced mechanical stress in isolation structures studied by micro-Raman spectroscopy. J. Appl. Phys. 1993, 74:4490-4500. JAPIAU, 0021-8979, 10.1063/1.354365.
6. Georgi C, Hecker M, Zschech E. Effects of laser-induced heating on Raman stress measurements of silicon and silicon-germanium structures. J. Appl. Phys. 2007, 101:123104-1-123104-6. JAPIAU, 0021-8979, 10.1063/1.2743882.
7. Hue F, Hytch M, Bender H, Houdeliier F, Claverie A. Direct mapping of strain in a strained silicon transistor by high-resolution electron microscopy. Phys. Rev. Lett. 2008, 100:156602-1-156602-4. PRLTAO, 0031-9007, 10.1103/PhysRevLett.100.156602.
8. Ito S, Namba H, Hirata T, Ando K, Koyama S, Ikezawa S, Suzuki T, Saitoh T, Horiuchi T. Effect of mechanical stress induced by etch-stop nitride: Impact on deep-submicron transistor performance. Microelectron. Reliab. 2002, 42:201-209. MCRLAS, 0026-2714, 10.1016/S0026-2714(01)00238-4.
9. Michell JH. Elementary distributions of plane stress. Proc. London Math. Soc. 1900, 32:35-61. PLMTAL, 0024-6115, 10.1112/plms/s1-32.1.23.
10. Mindlin RD, Cheng DH. Thermoelastic stress in the semi-infinite solid. J. Appl. Phys. 1950, 21:931-933. JAPIAU, 0021-8979, 10.1063/1.1699786.
11. Murray CE. Mechanics of edge effects in anisotropic thin film/substrate systems. J. Appl. Phys. 2006, 100:103532-1-103532-9. JAPIAU, 0021-8979, 10.1063/1.2369642.
12. Murray CE, Ren Z, Ying A, Polvino SM, Noyan IC. Strain measured in a silicon-on-insulator, complementary metal-oxide-semiconductor device channel induced by embedded silicon-carbon source/drain regions. Appl. Phys. Lett. 2009, 94:063502-1-063502-3. APPLAB, 0003-6951, 10.1063/1.3079656.
13. Murray CE, Saenger KL, Kalenci O, Polvino SM, Noyan IC, Lai B, Cai Z. Submicron mapping of silicon-on-insulator strain distributions induced by stressed liner structures. J. Appl. Phys. 2008, 104:013530-1-013530-8. JAPIAU, 0021-8979, 10.1063/1.2952044.
14. Murray CE, Yan H-F, Noyan IC, Cai Z, Lai B. High-resolution strain mapping in heteroepitaxial thin-film features. J. Appl. Phys. 2005, 98:13504-1-13504-9. JAPIAU, 0021-8979, 10.1063/1.1938277.
15. Rim K, Hoyt JL, Gibbons JF. Fabrication and analysis of deep submicron strained-Si N-MOSFET's. IEEE Trans. Electron Devices 2000, 47:1406-1415. IETDAI, 0018-9383, 10.1109/16.848284.
16. Rizzo F. An integral equation approach to boundary value problems of classical elastostatics. Q. Appl. Math. 1967, 25:83-95. QAMAAY, 0033-569X.
17. Smith CS. Piezoresistance effect in germanium and silicon. Phys. Rev. 1954, 94:42-49. PRVAAH, 0096-8250, 10.1103/PhysRev.94.42.
18. Thompson SE, Armstrong M, Auth C, Cea S, Chau R, Glass G, Hoffman T, Klaus J, Ma Z, McIntyre B, Murthy A, Obradovic B, Shifren L, Sivakumar S, Tyagi S, Ghani T, Mistry K, Bohr M, El-Mansy Y. A logic technology featuring strained-silicon. IEEE Electron Device Lett. 2004, 25:191-193. EDLEDZ, 0741-3106, 10.1109/LED.2004.825195.