FTIR, AFM and PL properties of thin SiOx films deposited by HFCVD

Materials Science and Engineering: B

Volumn 174, Issue 1-3, 2010, Pages 88-92

  Luna Lopez J A ^a   Garcia Salgado G ^a   Diaz Becerril T ^a   López, J Carrillo ^a   Vazquez Valerdi D E ^a   Juarez Santiesteban H ^a   Rosendo Andres E ^a   Coyopol, A ^a  

^a BENEMÉRITA UNIVERSIDAD AUTÓNOMA DE PUEBLA   (Mexico)

Author keywords

AFM; FTIR; Photoluminescence; Refractive index

Indexed keywords

ABSORPTION SPECTROSCOPY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GROWTH TEMPERATURE; PHOTOLUMINESCENCE; REFRACTIVE INDEX; SILICA; SILICON OXIDES;

ATOMIC-FORCE-MICROSCOPY; COMPATIBLE MATERIALS; FOURIER TRANSFORMED INFRARED SPECTROSCOPY; NONSTOICHIOMETRIC; PHOTOLUMINESCENCE PROPERTIES; PHOTOLUMINESCENCE RESPONSE; SILICON TECHNOLOGIES; SINGLE-CHIP; SIO X FILM; VIBRATION MODES;

ATOMIC FORCE MICROSCOPY;

EID: 77956469106     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2010.05.005     Document Type: Conference Paper

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