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Volumn 267, Issue 18, 2009, Pages 3100-3103
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Photoluminescence and radiation effect of Er and Pr implanted silicon-rich silicon oxide thin films
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Author keywords
Energy transfer; Er; Photoluminescence; Pr; Si SiO2
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Indexed keywords
CO-DOPED;
CONCENTRATION PROFILES;
CONCENTRATION RATIO;
DOPED FILMS;
ER;
LUMINESCENCE PEAK;
MATRIX;
PHOTOLUMINESCENCE SPECTRUM;
PL SPECTRA;
PR;
PR IONS;
SI CRYSTALS;
SI/SIO2;
SILICON RICH SILICON OXIDES;
VISIBLE LUMINESCENCE;
WHITE LIGHT EMITTING DIODES;
DOPING (ADDITIVES);
ENERGY TRANSFER;
ERBIUM;
FIELD EMISSION;
FIELD EMISSION DISPLAYS;
LIGHT;
LIGHT EMISSION;
LIGHT EMITTING DIODES;
OXIDE FILMS;
PHOTOLUMINESCENCE;
RADIATION;
SEMICONDUCTING FILMS;
SILICON OXIDES;
THIN FILMS;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 69949188842
PISSN: 0168583X
EISSN: None
Source Type: Journal
DOI: 10.1016/j.nimb.2009.06.029 Document Type: Article |
Times cited : (7)
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References (15)
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