Effect of disorder on longitudinal resistance of a graphene p-n junction in the quantum Hall regime

Physical Review B - Condensed Matter and Materials Physics

Volumn 81, Issue 24, 2010, Pages

  Chen, Jiang Chai ^a   Yeung, T C Au ^b   Sun, Qing Feng ^a  

^a INSTITUTE OF PHYSICS   (China)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77956326347     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.81.245417     Document Type: Article

References (31)

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31. Due to the lateral confinement of the system and the presence of the magnetic field, the carrier concentration n L / R is not strictly proportional to sgn (E L / R) E L / R 2. But it still is a good approximation because the carrier concentrations n L / R only are the slight fluctuations around sgn (E L / R) E L / R 2. In addition, this approximation does not change the value of the resistance plateaus, except for slightly changing the width of the resistance plateaus.