Ballistic-Ohmic quantum Hall plateau transition in a graphene p-n junction

Physical Review B - Condensed Matter and Materials Physics

Volumn 80, Issue 20, 2009, Pages

  Low, Tony ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

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Indexed keywords

EID: 77954710896     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.80.205423     Document Type: Article

References (54)

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51. A more recent experiment by Lohmann, which employed a four terminal measurement, observed prominent plateaus for only (2,2). The higher filling factor combination values were not reported. In their experiments, the p - n junctions were created via chemical doping, instead of the usual top/bottom gating scheme.
52. However, one could easily extends the simple tight-binding Hamiltonian to include higher orbitals by extracting the orbital coupling energies from a density functional calculation as described in Ref..
53. | 2. This only holds true if v n T v p T = v n B v p B = 0.
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