Short-channel nanowire transistor using a nanoporous crystal semiconductor 12CaO·7Al2O3

Materials Science and Engineering: B

Volumn 173, Issue 1-3, 2010, Pages 37-40

  Nishio, Y ^a   Nomura, K ^b   Yanagi, H ^a   Kamiya, T ^a,b   Hirano, M ^b   Hosono, H ^a,b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

12CaO 7Al2O3; Electron beam lithography; Field effect transistor; Nanowire

Indexed keywords

ALUMINUM COMPOUNDS; CALCIUM COMPOUNDS; CARRIER CONCENTRATION; CRYSTAL STRUCTURE; ELECTRON BEAM LITHOGRAPHY; ENERGY GAP; FIELD EFFECT TRANSISTORS; MODULATION; SEMICONDUCTOR DOPING; TEMPERATURE;

12CAO·7AL2O3; CRYSTAL SEMICONDUCTORS; CURRENT MODULATION; ELECTRICAL CONDUCTIVITY; ELECTRICAL INSULATORS; ELECTRON-BEAM LITHOGRAPHY; FIELD-EFFECT TRANSISTOR; NANOPOROUS CRYSTALS; NANOWIRE TRANSISTORS; SHORT CHANNELS;

NANOWIRES;

EID: 77956263276     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2009.12.018     Document Type: Conference Paper

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