InAs(Sb)/InP(100) quantum dots for mid-infrared emitters: Observation of 2.35 μm photoluminescence

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue 11, 2006, Pages 3920-3923

  Dore F ^a   Cornet, C ^a   Caroff, P ^a   Ballestar, A ^a   Even, J ^a   Bertru, N ^a   Dehaese, O ^a   Alghoraibi, I ^a   Folliot, H ^a   Piron, R ^a   Corre, A Le ^a   Loualiche, S ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER MATERIALS; DIRECT GROWTH; EMISSION SPECTRUMS; EMISSION WAVE LENGTH; EXPERIMENTAL STUDIES; FLOW-RATE; INP SUBSTRATES; INTERNATIONAL CONFERENCES; LONGER WAVELENGTHS; MID-INFRARED; MOLECULAR BEAM EPITAXY (MBE); PHOTOLUMINESCENCE (PL) SPECTROSCOPY; QUANTUM DOTS; QUANTUM-CONFINEMENT EFFECTS; RED SHIFTING; ROOM-TEMPERATURE;

ANTIMONY; CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; ELECTRONIC PROPERTIES; EMISSION SPECTROSCOPY; EPITAXIAL GROWTH; INDIUM ARSENIDE; INFRARED DEVICES; LIGHT EMISSION; LUMINESCENCE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NANOSTRUCTURES; OPTICAL WAVEGUIDES; PHOTOLUMINESCENCE; QUANTUM ELECTRONICS; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; WASTEWATER;

SEMICONDUCTOR QUANTUM DOTS;

EID: 49549098412     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200671622     Document Type: Conference Paper

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