Structure, electrical conductivity AR and Hall Effect of amorphous Al-C-N thin films

Thin Solid Films

Volumn 518, Issue 23, 2010, Pages 7038-7043

  Luo, Q H ^a,b   Lu, Y H ^a   Lou, Y Z ^b   Wang, Y B ^a   Yu, D L ^c  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

^b BEIJING INSTITUTE OF AERONAUTICAL MATERIALS   (China)

^c YANSHAN UNIVERSITY   (China)

Author keywords

Al content; Al C N thin films; Electrical resistance; Hall Effect; Structure

Indexed keywords

AL CONTENT; AL-C-N THIN FILMS; BAND GAPS; CLOSED FIELD UNBALANCED REACTIVE MAGNETRON SPUTTERING; ELECTRICAL CONDUCTIVITY; ELECTRICAL RESISTANCES; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; HALL COEFFICIENT; NITROGEN GAS; P TYPE SEMICONDUCTOR; PHASE CONFIGURATIONS; PROPERTY MEASUREMENT; SI (100) SUBSTRATE; SPECTROSCOPY MEASUREMENTS; STRUCTURE;

AMORPHOUS FILMS; ARGON; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; FIELD EMISSION; FIELD EMISSION MICROSCOPES; GALVANOMAGNETIC EFFECTS; GYRATORS; HALL MOBILITY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HOLE CONCENTRATION; HOLE MOBILITY; NITROGEN; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

ALUMINUM;

EID: 77956228327     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.07.053     Document Type: Article

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