High conductance bottom-contact pentacene thin-film transistors with gold-nickel adhesion layers

Applied Physics Letters

Volumn 97, Issue 3, 2010, Pages

  Kitamura, Masatoshi ^a   Kuzumoto, Yasutaka ^a,b   Kang, Woogun ^c   Aomori, Shigeru ^a,b   Arakawa, Yasuhiko ^a,c  

^a UNIVERSITY OF TOKYO   (Japan)

^b SHARP CORPORATION   (Japan)

^c INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION LAYER; BOTTOM-CONTACT PENTACENE; CHANNEL LENGTH; ELECTRODE TYPE; MODIFIED ELECTRODES; SATURATION MOBILITY; SURFACE MODIFICATION; TRANSISTOR CHARACTERISTICS;

ADHESION; ELECTRODES; NICKEL ALLOYS; SEMICONDUCTING ORGANIC COMPOUNDS; TITANIUM ALLOYS;

THIN FILM TRANSISTORS;

EID: 77956221760     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3465735     Document Type: Article

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