Current-gain cutoff frequencies above 10 MHz for organic thin-film transistors with high mobility and low parasitic capacitance

Applied Physics Letters

Volumn 95, Issue 2, 2009, Pages

  Kitamura, Masatoshi ^a   Arakawa, Yasuhiko ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM CONTACTS; C60 THIN-FILM; CHANNEL LENGTH; DIRECT MEASUREMENT; GAIN CUTOFF FREQUENCY; GATE ELECTRODES; HIGH MOBILITY; LOW-PARASITIC; MODULATION CURRENT; N-CHANNEL; ORGANIC THIN FILM TRANSISTORS; PARASITIC CAPACITANCE; SATURATION MOBILITY;

ALUMINA; CAPACITANCE; FIELD EFFECT TRANSISTORS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS;

CUTOFF FREQUENCY;

EID: 67650742300     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3176480     Document Type: Article

References (17)

1. M. Kawasaki, S. Imazeki, M. Ando, Y. Sekiguchi, S. Hirota, S. Uemura, and T. Kamata, IEEE Trans. Electron Devices 0018-9383 53, 435 (2006). 10.1109/TED.2005.864371
2. S. Ohta, T. Chuman, S. Miyaguchi, H. Satoh, T. Tanabe, Y. Okuda, and M. Tsuchida, Jpn. J. Appl. Phys., Part 1 0021-4922 44, 3678 (2005). 10.1143/JJAP.44.3678
3. B. Yoo, T. Jung, D. Basu, A. Dodabalapur, B. A. Jones, A. Facchetti, M. R. Wasielewski, and T. J. Marks, Appl. Phys. Lett. 0003-6951 88, 082104 (2006). 10.1063/1.2177627
4. M. Kitamura and Y. Arakawa, Appl. Phys. Lett. 0003-6951 91, 053505 (2007). 10.1063/1.2759981
5. P. F. Baude, D. A. Ender, M. A. Haase, T. W. Kelley, D. V. Muyres, and S. D. Theiss, Appl. Phys. Lett. 0003-6951 82, 3964 (2003). 10.1063/1.1579554
6. S. Steudel, S. De Vusser, K. Myny, M. Lenes, J. Genoe, and P. Heremans, J. Appl. Phys. 0021-8979 99, 114519 (2006). 10.1063/1.2202243
7. E. Cantatore, T. Geuns, G. Gelinck, E. van Veenendaal, A. Gruijthuijsen, L. Schrijnemakers, S. Drews, and D. de Leeuw, IEEE J. Solid-State Circuits 0018-9200 42, 84 (2007). 10.1109/JSSC.2006.886556
8. V. Wagner, P. Wöbkenberg, A. Hoppe, and J. Seekamp, Appl. Phys. Lett. 0003-6951 89, 243515 (2006). 10.1063/1.2405414
9. M. Kitamura and Y. Arakawa, J. Phys.: Condens. Matter 0953-8984 20, 184011 (2008). 10.1088/0953-8984/20/18/184011
10. T. D. Anthopoulos, B. Singh, N. Marjanovic, N. S. Sariciftci, A. M. Ramil, H. Sitter, M. Cölle, and D. M. de Leeuw, Appl. Phys. Lett. 0003-6951 89, 213504 (2006). 10.1063/1.2387892
11. M. Kitamura, Y. Kuzumoto, M. Kamura, S. Aomori, and Y. Arakawa, Appl. Phys. Lett. 0003-6951 91, 183514 (2007). 10.1063/1.2804004
12. D. J. Gundlach, L. Zhou, J. A. Nichols, T. N. Jackson, P. V. Necliudov, and M. Shur, J. Appl. Phys. 0021-8979 100, 024509 (2006). 10.1063/1.2215132
13. J. N. Haddock, X. -H. Zhang, B. Domercq, and B. Kippelen, Org. Electron. 1566-1199 6, 182 (2005). 10.1016/j.orgel.2005.06.002
14. M. Kitamura, S. Aomori, J. -H. Na, and Y. Arakawa, Appl. Phys. Lett. 0003-6951 93, 033313 (2008). 10.1063/1.2959732
15. M. Kitamura, Y. Kuzumoto, S. Aomori, M. Kamura, J. -H. Na, and Y. Arakawa, Appl. Phys. Lett. 0003-6951 94, 083310 (2009). 10.1063/1.3090489
16. Si1 layer has a rms surface roughness of 0.6 nm, which is about the same as that of a glass substrate.
17. T. Hyodo, F. Morita, S. Naka, H. Okada, and H. Onnagawa, Jpn. J. Appl. Phys., Part 1 0021-4922 43, 2323 (2004). 10.1143/JJAP.43.2323