Charge trap identification for proton-irradiated p+ channel CCDs

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7742, Issue , 2010, Pages

  Mostek, Nick J ^a   Bebek, Christopher J ^a   Karcher, Armin ^a   Kolbe, William F ^a   Roe, Natalie A ^a   Thacker, Jonathan ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

Charge Transfer Efficiency; Pocket Pumping; Proton Radiation Damage; Silicon CCD Detectors

Indexed keywords

BULK SILICON; BULK TRAPS; CCD DETECTORS; CHARGE TRANSFER EFFICIENCY; CHARGE TRANSFER INEFFICIENCY; CHARGE TRAP; CROSS SECTION; DEVICE FABRICATIONS; DIVACANCIES; ENERGY LEVEL; LOW-ENERGY PROTONS; OPERATING PARAMETERS; OXYGEN DEFECT; PARALLEL TRANSFERS; POCKET PUMPING; PROTON RADIATION DAMAGE; PUMPING TECHNIQUES; SILICON LATTICES; SOFTWARE CORRECTION; SPACE ENVIRONMENT; TRANSFER PROCESS; TRAP PROPERTIES;

ASTRONOMY; CHARGE TRANSFER; CHARGE TRAPPING; HIGH ENERGY PHYSICS; INFRARED DETECTORS; ION EXCHANGE; MASS TRANSFER; OXYGEN; PROTON IRRADIATION; PROTONS; PUMPS; RADIATION DAMAGE; RADIATION DETECTORS;

SILICON DETECTORS;

EID: 77956209024     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.855936     Document Type: Conference Paper

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