Surface passivation at low temperature of p- and n-type silicon wafers using a double layer a-Si:H/SiNx:H

Materials Science and Engineering: B

Volumn 159-160, Issue C, 2009, Pages 242-247

  Focsa, A ^a   Slaoui, A ^a   Charifi, H ^a   Stoquert, J P ^a   Roques, S ^a  

^a CNRS   (France)

Author keywords

Amorphous silicon; ECR PECVD; ERDA; FTIR; Passivation; Silicon nitride

Indexed keywords

AMORPHOUS SILICON; HYDROGEN; HYDROGENATION; OPTICAL PROPERTIES; PASSIVATION; SILICON WAFERS; TEMPERATURE;

A-SI:H; DOUBLE LAYERS; ECR-PECVD; ELASTIC RECOIL DETECTION ANALYSIS; FTIR; LOWS-TEMPERATURES; N TYPE SILICON; P AND N TYPES; P-TYPE SILICON; SURFACE PASSIVATION;

SILICON NITRIDE;

EID: 67349131865     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2009.02.009     Document Type: Article

References (18)

1. Dauwe S., Schmidt J., Metz A., and Hezel R. Proc. 29th IEEE PVSC (2002) 1246-1249
2. Arifuku N., Damrin M., Suda M., Saitoh T., and Kamisako K. Proc. 21st EU PVSEC. Dresden (2006) 877-880
3. Scharper M., Schmidt J., Plagwitz H., and Brendel R. Progress in Photovoltaics: Research and Applications 13 (2005) 381-386
4. Roston P.J., Rau U., et al. Solar Energy Materials & Solar Cells 90 (2006) 1345-1352
5. Sopori B., Zhang Y., Reedy R., Jones K., Yanfa Y., Al-Jassim M., Bathey B., and Kalejs J. 31st IEEE PVSC. Lake Buena Vista, USA (2005) 1039-1042
6. Hofmann M., Schmidt C., Kohn N., Grambole D., Rentsch J., Glanz S., and Preu R. Proc. 22nd EU PVSEC. Milan (2007) 1528-1531
7. Ulyashin A., Bentzen A., et al. Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference, vol. 2 (2006) 1354-1357
8. Lanford W.A., and Rand M.J. Journal of Applied Physics 49 (1978) 2473-2477
9. Sinton R.A., Cuevas A., and Stucking M. Proc. 25th IEEE PVSC. Washington, DC (1996) 457-460
10. Stephens A.W., and Green M.A. Solar Energy Materials & Solar Cells 45 (1997) 255-265
11. Takato H., Sakata I., and Shimokawa III R. World Conference on Photovoltaic Energy Conversion (WCPEC-3), Proc. vol. 2. Osaka (2003) 1108-1111
12. Charifi H., Zerga A., Slaoui A., Muller J.-C., and Stoquert J.P. Proc. 21st EU PVSEC. Dresden (2006) 846-850
13. Kerr M.J., and Cuevas A. Journal of Applied Physics 91 (2002) 2473-2480
14. Nagayoshi H., Abe Y., Yazawa H., Saiton T., and Kamisako K. Proc. 2nd World PVSEC. Vienna (1998) 318-321
15. Masaki Y., Gibson R., and LeComber P. Journal of Applied Physics 73 (1993) 5088-5094
16. Hasergawa S., Amano Y., Inokuma T., and Kurata Y. Journal of Applied Physics (1994) 1493-1500
17. Bae S., Farber D., and Fonash S. Solid-State Electronics 44 (2000) 1355-1360
18. Jana T., Mukhopadhyay S., and Ray S. Solar Energy Materials & Solar Cells 71 (2002) 197-211