Recent advances in high density phase change memory (PRAM)

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 2007, Pages

  Ha, Daewon ^a   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER PROGRAMMING; NONVOLATILE STORAGE; PROBLEM SOLVING; RANDOM ACCESS STORAGE;

EVOLUTIONARY MEMORY; OVERWRITE CAPABILITY; PHASE-CHANGE RANDOM ACCESS MEMORY (PRAM); PROGRAMMING SPEED;

PHASE CHANGE MEMORY;

EID: 34548841089     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.2007.378939     Document Type: Conference Paper

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