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Applied Physics Letters

Volumn 97, Issue 7, 2010, Pages

Surface electronic structure of ZrB2 buffer layers for GaN growth on Si wafers

(5) Yamada Takamura, Yukiko a Bussolotti, Fabio a,b Fleurence, Antoine a Bera, Sambhunath a,c Friedlein, Rainer a

a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (Japan)

b CHIBA UNIVERSITY (Japan)

c CEA SACLAY (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANGLE-RESOLVED ULTRAVIOLET PHOTOELECTRON SPECTROSCOPIES; CONDUCTIVE CERAMICS; GAN GROWTH; LATTICE MATCHING; NITRIDE LAYERS; SI (1 1 1); SI WAFER; SINGLE-CRYSTALLINE THIN FILMS; SURFACE ELECTRONIC PROPERTIES; SURFACE ELECTRONIC STRUCTURES; SURFACE STATE; VERTICAL LIGHT-EMITTING DIODES; ZIRCONIUM DIBORIDE;

BORIDES; BUFFER LAYERS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; EPITAXIAL FILMS; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMITTING DIODES; SILICON WAFERS; SINGLE CRYSTALS; SUBSTRATES; SURFACE STRUCTURE; TWO DIMENSIONAL; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY; ZIRCONIUM; ZIRCONIUM COMPOUNDS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77956037092 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3481414 Document Type: Article

Times cited : (43)

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